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Advance Technical Data
High Voltage IGBT
IXGH 6N170A IXGT 6N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 6 A = 7.0 V = 32 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 33 TC = 25C
Maximum Ratings 1700 1700 20 30 6 3 14 ICM = 12 @ 0.8 VCES 10 75 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
s W C C C
G = Gate, E = Emitter,
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in. 300 C 6 4 g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Features International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 3.0 Note 1 TJ = 25C TJ = 125C V V A A nA V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
5.0 10 500 100
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
TJ = 25C TJ = 125C
5.5 6.5
7.0
Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
(c) 2003 IXYS All rights reserved
DS98990A(01/03)
IXGH 6N170A IXGT 6N170A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2 3.5 330 VCE = 25 V, VGE = 0 V, f = 1 MHz 23 6 20 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 3.6 8 46 Inductive load, TJ = 25C IC = IC25, VGE = 15 V RG = 33 , VCE = 0.5 VCES 40 220 32 0.19 48 Inductive load, TJ = 125C IC = IC25, VGE = 15 V RG = 33 , VCE = 0.5 VCES 43 0.7 230 41 0.26 450 65 S pF pF pF nC nC nC ns ns ns ns
Dim.
e P
TO-247 AD Outline
gfs Cies Coes Cres QG QGE QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC25; VCE = 20 V Note 2
0.40 mJ ns ns mJ ns ns mJ
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline (TO-247) 0.25 1.65 K/W K/W
Notes: 1.
Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 %
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
2.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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